Transistorer - bipolar (BJT) - RF

MRF5812M

Dele Stock.: 5533

MRF5812MR2

Dele Stock.: 7279

JANS2N2857UB-LC

Dele Stock.: 4803

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 15V, Støjfigur (dB Typ @ f): 4.5dB @ 450MHz, Gevinst: 21dB, Effekt - maks: 200mW,

SD1419-06H

Dele Stock.: 7341

MS2341

Dele Stock.: 7288

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 65V, Frekvens - Overgang: 1.025GHz ~ 1.15GHz, Gevinst: 9dB, Effekt - maks: 87.5W,

JAN2N4957

Dele Stock.: 7284

Transistortype: PNP, Spænding - Collector Emitter Breakdown (Max): 30V, Støjfigur (dB Typ @ f): 3.5dB @ 450MHz, Gevinst: 25dB, Effekt - maks: 200mW,

MSC72111H

Dele Stock.: 7267

SD8002-01H

Dele Stock.: 7301

MSC74070

Dele Stock.: 7353

MS1579

Dele Stock.: 7203

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 25V, Frekvens - Overgang: 470MHz ~ 860MHz, Gevinst: 8.5dB, Effekt - maks: 65W,

MS2874

Dele Stock.: 7302

MS2200A

Dele Stock.: 7286

MDS500L

Dele Stock.: 199

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 70V, Frekvens - Overgang: 1.03GHz ~ 1.09GHz, Gevinst: 9.2dB, Effekt - maks: 833W,

JAN2N2857UB

Dele Stock.: 1258

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 15V, Støjfigur (dB Typ @ f): 4.5dB @ 450MHz, Gevinst: 21dB, Effekt - maks: 200mW,

MS1015D

Dele Stock.: 7280

MS2279

Dele Stock.: 7291

DME375A

Dele Stock.: 319

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 55V, Frekvens - Overgang: 1.025GHz ~ 1.15GHz, Gevinst: 6.5dB, Effekt - maks: 375W,

MRF5812G

Dele Stock.: 7287

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 15V, Frekvens - Overgang: 5GHz, Støjfigur (dB Typ @ f): 2dB ~ 3dB @ 500MHz, Gevinst: 13dB ~ 15.5dB, Effekt - maks: 1.25W,

UPA812T-A

Dele Stock.: 7182

Transistortype: 2 NPN (Dual), Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.4dB @ 1GHz, Gevinst: 12dB, Effekt - maks: 200mW,

NE68030-T1-R45-A

Dele Stock.: 7208

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.9dB @ 2GHz, Gevinst: 9.4dB, Effekt - maks: 150mW,

NE68033-T1B-A

Dele Stock.: 7187

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.8dB @ 2GHz, Gevinst: 9dB, Effekt - maks: 200mW,

NESG270034-T1-AZ

Dele Stock.: 7214

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 9.2V, Effekt - maks: 1.9W,

NESG260234-T1-AZ

Dele Stock.: 7195

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 9.2V, Effekt - maks: 1.9W,

NE46234-T1-SE-AZ

Dele Stock.: 7195

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 6GHz, Støjfigur (dB Typ @ f): 2.3dB @ 1GHz, Gevinst: 8.3dB, Effekt - maks: 1.8W,

NE85633-R25-A

Dele Stock.: 7175

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 11.5dB, Effekt - maks: 200mW,

CMPT918 TR

Dele Stock.: 135732

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 15V, Frekvens - Overgang: 600MHz, Støjfigur (dB Typ @ f): 6dB @ 60MHz, Gevinst: 11dB, Effekt - maks: 350mW,

PN3563

Dele Stock.: 162770

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V,

DSC5G0200L

Dele Stock.: 181235

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 20V, Frekvens - Overgang: 650MHz, Støjfigur (dB Typ @ f): 3.3dB @ 100MHz, Gevinst: 24dB, Effekt - maks: 150mW,

MMBTH10-7-F

Dele Stock.: 129901

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 25V, Frekvens - Overgang: 650MHz, Effekt - maks: 300mW,

MMBTH10-4LT1

Dele Stock.: 4810

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 25V, Frekvens - Overgang: 800MHz, Effekt - maks: 225mW,

MCH4016-TL-H

Dele Stock.: 146016

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.2dB @ 1GHz, Gevinst: 18dB, Effekt - maks: 350mW,

NSVF4017SG4T1G

Dele Stock.: 9938

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.2dB @ 1GHz, Gevinst: 17dB, Effekt - maks: 450mW,

PH3134-9L

Dele Stock.: 7245

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 60V, Gevinst: 8dB, Effekt - maks: 9W,

MAPRST0912-350

Dele Stock.: 249

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 65V, Frekvens - Overgang: 1.215GHz, Gevinst: 9.4dB, Effekt - maks: 350W,

PH3134-11S

Dele Stock.: 4779

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 60V, Gevinst: 8dB, Effekt - maks: 11W,

LPT16ED

Dele Stock.: 3181

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 4V, Frekvens - Overgang: 16GHz, Gevinst: 5.2dB, Effekt - maks: 250mW,