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Transistorer - bipolar (BJT) - enkelt, præ-f

ADTA143ZUAQ-7
Diodes Incorporated

ADTA143ZUAQ-7

Dele Stock.: 152

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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ADTA144EUAQ-13
Diodes Incorporated

ADTA144EUAQ-13

Dele Stock.: 126718

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms,

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ADTA114EUAQ-7
Diodes Incorporated

ADTA114EUAQ-7

Dele Stock.: 131267

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms,

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ADTC124ECAQ-13
Diodes Incorporated

ADTC124ECAQ-13

Dele Stock.: 123811

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms,

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ADTA114EUAQ-13
Diodes Incorporated

ADTA114EUAQ-13

Dele Stock.: 101827

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms,

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ADTC143ZUAQ-13
Diodes Incorporated

ADTC143ZUAQ-13

Dele Stock.: 182

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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ADTC143TUAQ-13
Diodes Incorporated

ADTC143TUAQ-13

Dele Stock.: 128

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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ADTC114YUAQ-13
Diodes Incorporated

ADTC114YUAQ-13

Dele Stock.: 147

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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ADTA143XUAQ-13
Diodes Incorporated

ADTA143XUAQ-13

Dele Stock.: 126

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Til ønskeliste
ADTA143XUAQ-7
Diodes Incorporated

ADTA143XUAQ-7

Dele Stock.: 9928

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Til ønskeliste
ADTC114YUAQ-7
Diodes Incorporated

ADTC114YUAQ-7

Dele Stock.: 9985

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Til ønskeliste
ADTC124ECAQ-7
Diodes Incorporated

ADTC124ECAQ-7

Dele Stock.: 132443

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms,

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ADTC114EUAQ-7
Diodes Incorporated

ADTC114EUAQ-7

Dele Stock.: 149741

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms,

Til ønskeliste
ADTC144EUAQ-7
Diodes Incorporated

ADTC144EUAQ-7

Dele Stock.: 162255

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms,

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ADTC143TUAQ-7
Diodes Incorporated

ADTC143TUAQ-7

Dele Stock.: 9972

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Til ønskeliste
ADTA144ECAQ-7
Diodes Incorporated

ADTA144ECAQ-7

Dele Stock.: 167067

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms,

Til ønskeliste
ADTA144EUAQ-7
Diodes Incorporated

ADTA144EUAQ-7

Dele Stock.: 145892

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms,

Til ønskeliste
ADTA144ECAQ-13
Diodes Incorporated

ADTA144ECAQ-13

Dele Stock.: 103821

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms,

Til ønskeliste
ADTC144EUAQ-13
Diodes Incorporated

ADTC144EUAQ-13

Dele Stock.: 169878

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms,

Til ønskeliste
ADTC114EUAQ-13
Diodes Incorporated

ADTC114EUAQ-13

Dele Stock.: 107782

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms,

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ADTA143ZUAQ-13
Diodes Incorporated

ADTA143ZUAQ-13

Dele Stock.: 1775

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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BCR 135F E6327
Infineon Technologies

BCR 135F E6327

Dele Stock.: 2128

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR158E6327HTSA1
Infineon Technologies

BCR158E6327HTSA1

Dele Stock.: 111325

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR562E6327HTSA1
Infineon Technologies

BCR562E6327HTSA1

Dele Stock.: 174692

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

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BCR198E6393HTSA1
Infineon Technologies

BCR198E6393HTSA1

Dele Stock.: 2061

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 519 E6327
Infineon Technologies

BCR 519 E6327

Dele Stock.: 2048

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V,

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BCR 198T E6327
Infineon Technologies

BCR 198T E6327

Dele Stock.: 2013

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 70mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR166WE6327HTSA1
Infineon Technologies

BCR166WE6327HTSA1

Dele Stock.: 2057

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 162L3 E6327
Infineon Technologies

BCR 162L3 E6327

Dele Stock.: 2049

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR141WE6327HTSA1
Infineon Technologies

BCR141WE6327HTSA1

Dele Stock.: 2073

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 119 E6433
Infineon Technologies

BCR 119 E6433

Dele Stock.: 2021

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 129F E6327
Infineon Technologies

BCR 129F E6327

Dele Stock.: 2023

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 133F B6327
Infineon Technologies

BCR 133F B6327

Dele Stock.: 1978

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR108WE6327BTSA1
Infineon Technologies

BCR108WE6327BTSA1

Dele Stock.: 2069

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 101T E6327
Infineon Technologies

BCR 101T E6327

Dele Stock.: 1992

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR505E6778HTSA1
Infineon Technologies

BCR505E6778HTSA1

Dele Stock.: 5409

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

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