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Transistorer - bipolar (BJT) - arrays, præ-f

ADC124EUQ-7
Diodes Incorporated

ADC124EUQ-7

Dele Stock.: 102169

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, 22 kOhms,

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ACX114YUQ-13R
Diodes Incorporated

ACX114YUQ-13R

Dele Stock.: 122236

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, 47 kOhms,

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ADC124EUQ-13
Diodes Incorporated

ADC124EUQ-13

Dele Stock.: 174294

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, 22 kOhms,

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ADA114EUQ-7
Diodes Incorporated

ADA114EUQ-7

Dele Stock.: 198421

Transistortype: 2 PNP Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, 10 kOhms,

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ACX124EUQ-7R
Diodes Incorporated

ACX124EUQ-7R

Dele Stock.: 171910

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, 22 kOhms,

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ADA114YUQ-7
Diodes Incorporated

ADA114YUQ-7

Dele Stock.: 112948

Transistortype: 2 PNP Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, 47 kOhms,

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ADC114YUQ-7
Diodes Incorporated

ADC114YUQ-7

Dele Stock.: 176159

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, 47 kOhms,

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ACX114YUQ-7R
Diodes Incorporated

ACX114YUQ-7R

Dele Stock.: 162673

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, 47 kOhms,

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ADA114EUQ-13
Diodes Incorporated

ADA114EUQ-13

Dele Stock.: 149878

Transistortype: 2 PNP Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, 10 kOhms,

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ADA114YUQ-13
Diodes Incorporated

ADA114YUQ-13

Dele Stock.: 147362

Transistortype: 2 PNP Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, 47 kOhms,

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ADC144EUQ-13
Diodes Incorporated

ADC144EUQ-13

Dele Stock.: 21546

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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ACX124EUQ-13R
Diodes Incorporated

ACX124EUQ-13R

Dele Stock.: 121902

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, 22 kOhms,

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ADC114YUQ-13
Diodes Incorporated

ADC114YUQ-13

Dele Stock.: 121085

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, 47 kOhms,

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BCR35PNH6327XTSA1
Infineon Technologies

BCR35PNH6327XTSA1

Dele Stock.: 152076

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 48PN H6727
Infineon Technologies

BCR 48PN H6727

Dele Stock.: 1466

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 70mA, 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 141S H6727
Infineon Technologies

BCR 141S H6727

Dele Stock.: 1531

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR35PNE6327BTSA1
Infineon Technologies

BCR35PNE6327BTSA1

Dele Stock.: 1529

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 22PN H6727
Infineon Technologies

BCR 22PN H6727

Dele Stock.: 1468

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 148S H6827
Infineon Technologies

BCR 148S H6827

Dele Stock.: 1537

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 133S H6444
Infineon Technologies

BCR 133S H6444

Dele Stock.: 1441

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 141S E6727
Infineon Technologies

BCR 141S E6727

Dele Stock.: 1506

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 116S H6727
Infineon Technologies

BCR 116S H6727

Dele Stock.: 3210

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 116S E6727
Infineon Technologies

BCR 116S E6727

Dele Stock.: 1473

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR108SH6433XTMA1
Infineon Technologies

BCR108SH6433XTMA1

Dele Stock.: 1470

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR08PNE6327BTSA1
Infineon Technologies

BCR08PNE6327BTSA1

Dele Stock.: 1495

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR48PNE6433BTMA1
Infineon Technologies

BCR48PNE6433BTMA1

Dele Stock.: 1457

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 70mA, 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR48PNE6327BTSA1
Infineon Technologies

BCR48PNE6327BTSA1

Dele Stock.: 3149

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 70mA, 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR35PNE6433HTMA1
Infineon Technologies

BCR35PNE6433HTMA1

Dele Stock.: 1427

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR22PNE6433HTMA1
Infineon Technologies

BCR22PNE6433HTMA1

Dele Stock.: 1454

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR198SE6327BTSA1
Infineon Technologies

BCR198SE6327BTSA1

Dele Stock.: 1473

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR22PNE6327BTSA1
Infineon Technologies

BCR22PNE6327BTSA1

Dele Stock.: 1505

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR185SE6327BTSA1
Infineon Technologies

BCR185SE6327BTSA1

Dele Stock.: 1465

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR183SE6433BTMA1
Infineon Technologies

BCR183SE6433BTMA1

Dele Stock.: 1484

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR185SB6327XT
Infineon Technologies

BCR185SB6327XT

Dele Stock.: 1459

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR183SE6327BTSA1
Infineon Technologies

BCR183SE6327BTSA1

Dele Stock.: 1440

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR169SE6327BTSA1
Infineon Technologies

BCR169SE6327BTSA1

Dele Stock.: 1509

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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