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Transistorer - bipolar (BJT) - enkelt, præ-f

PDTB114ETR
Nexperia USA Inc.

PDTB114ETR

Dele Stock.: 192410

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

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DDTC143XE-7
Diodes Incorporated

DDTC143XE-7

Dele Stock.: 197990

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DDTA123TKA-7-F
Diodes Incorporated

DDTA123TKA-7-F

Dele Stock.: 1915

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTA144TKA-7-F
Diodes Incorporated

DDTA144TKA-7-F

Dele Stock.: 1944

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTD123YU-7-F
Diodes Incorporated

DDTD123YU-7-F

Dele Stock.: 159098

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DDTA123ECA-7-F
Diodes Incorporated

DDTA123ECA-7-F

Dele Stock.: 167434

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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DDTC124GKA-7-F
Diodes Incorporated

DDTC124GKA-7-F

Dele Stock.: 1901

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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DDTD142JU-7-F
Diodes Incorporated

DDTD142JU-7-F

Dele Stock.: 100187

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 470 Ohms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DDTC142JE-7-F
Diodes Incorporated

DDTC142JE-7-F

Dele Stock.: 125307

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 470 Ohms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V,

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DDTC143XKA-7-F
Diodes Incorporated

DDTC143XKA-7-F

Dele Stock.: 1911

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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SMUN2230T1G
ON Semiconductor

SMUN2230T1G

Dele Stock.: 178747

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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FJV3115RMTF
ON Semiconductor

FJV3115RMTF

Dele Stock.: 170458

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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NSBC143EF3T5G
ON Semiconductor

NSBC143EF3T5G

Dele Stock.: 150999

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSBC114TF3T5G
ON Semiconductor

NSBC114TF3T5G

Dele Stock.: 143954

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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PDTC123ES,126
NXP USA Inc.

PDTC123ES,126

Dele Stock.: 1997

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

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PDTB113ES,126
NXP USA Inc.

PDTB113ES,126

Dele Stock.: 1965

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V,

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PDTC124ES,126
NXP USA Inc.

PDTC124ES,126

Dele Stock.: 1970

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

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PDTA114TE,115
NXP USA Inc.

PDTA114TE,115

Dele Stock.: 1980

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

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DTC143XCAHZGT116
Rohm Semiconductor

DTC143XCAHZGT116

Dele Stock.: 16286

Transistortype: NPN - Pre-Biased + Diode, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTC015EEBTL
Rohm Semiconductor

DTC015EEBTL

Dele Stock.: 107532

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 20mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DTB114GKT146
Rohm Semiconductor

DTB114GKT146

Dele Stock.: 168234

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DTC143XUAT106
Rohm Semiconductor

DTC143XUAT106

Dele Stock.: 114463

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTA143ZKAT146
Rohm Semiconductor

DTA143ZKAT146

Dele Stock.: 123299

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DTC144VKAT146
Rohm Semiconductor

DTC144VKAT146

Dele Stock.: 164888

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V,

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UNR321000L
Panasonic Electronic Components

UNR321000L

Dele Stock.: 108084

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR511600L
Panasonic Electronic Components

UNR511600L

Dele Stock.: 122493

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR9219G0L
Panasonic Electronic Components

UNR9219G0L

Dele Stock.: 136285

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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UNR911BG0L
Panasonic Electronic Components

UNR911BG0L

Dele Stock.: 2166

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR92A8G0L
Panasonic Electronic Components

UNR92A8G0L

Dele Stock.: 1977

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 510 Ohms, Modstand - Emitterbase (R2): 5.1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR9112G0L
Panasonic Electronic Components

UNR9112G0L

Dele Stock.: 1944

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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UNR511VG0L
Panasonic Electronic Components

UNR511VG0L

Dele Stock.: 1962

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V,

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UNR9110G0L
Panasonic Electronic Components

UNR9110G0L

Dele Stock.: 141689

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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RN2315TE85LF
Toshiba Semiconductor and Storage

RN2315TE85LF

Dele Stock.: 100188

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1112ACT(TPL3)
Toshiba Semiconductor and Storage

RN1112ACT(TPL3)

Dele Stock.: 1954

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2101ACT(TPL3)
Toshiba Semiconductor and Storage

RN2101ACT(TPL3)

Dele Stock.: 1987

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN1105CT(TPL3)
Toshiba Semiconductor and Storage

RN1105CT(TPL3)

Dele Stock.: 1976

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

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