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Transistorer - bipolar (BJT) - enkelt, præ-f

DRC5115G0L
Panasonic Electronic Components

DRC5115G0L

Dele Stock.: 116100

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR521V00L
Panasonic Electronic Components

UNR521V00L

Dele Stock.: 163517

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 6 @ 6mA, 10V,

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UNR5218G0L
Panasonic Electronic Components

UNR5218G0L

Dele Stock.: 1951

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 510 Ohms, Modstand - Emitterbase (R2): 5.1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR222300L
Panasonic Electronic Components

UNR222300L

Dele Stock.: 178264

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V,

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UNR521FG0L
Panasonic Electronic Components

UNR521FG0L

Dele Stock.: 1929

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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DRA2143T0L
Panasonic Electronic Components

DRA2143T0L

Dele Stock.: 110353

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR921NJ0L
Panasonic Electronic Components

UNR921NJ0L

Dele Stock.: 178920

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DDTC123YUA-7-F
Diodes Incorporated

DDTC123YUA-7-F

Dele Stock.: 159285

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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DDTC125TUA-7
Diodes Incorporated

DDTC125TUA-7

Dele Stock.: 1998

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 200 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTA143TCA-7-F
Diodes Incorporated

DDTA143TCA-7-F

Dele Stock.: 193592

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC115GKA-7-F
Diodes Incorporated

DDTC115GKA-7-F

Dele Stock.: 1869

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V,

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DDTC123TE-7-F
Diodes Incorporated

DDTC123TE-7-F

Dele Stock.: 168395

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTA143FKA-7-F
Diodes Incorporated

DDTA143FKA-7-F

Dele Stock.: 1937

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

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DDTA113ZKA-7-F
Diodes Incorporated

DDTA113ZKA-7-F

Dele Stock.: 1903

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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DDTC144WKA-7-F
Diodes Incorporated

DDTC144WKA-7-F

Dele Stock.: 1955

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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DDTC144TUA-7
Diodes Incorporated

DDTC144TUA-7

Dele Stock.: 2097

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTA143XUA-7
Diodes Incorporated

DDTA143XUA-7

Dele Stock.: 2121

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTC123ECAHZGT116
Rohm Semiconductor

DTC123ECAHZGT116

Dele Stock.: 24337

Transistortype: NPN - Pre-Biased + Diode, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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DTA114TUAT106
Rohm Semiconductor

DTA114TUAT106

Dele Stock.: 183739

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTC123TKAT146
Rohm Semiconductor

DTC123TKAT146

Dele Stock.: 158912

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTA143EEBHZGTL
Rohm Semiconductor

DTA143EEBHZGTL

Dele Stock.: 9929

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTC343TKT146
Rohm Semiconductor

DTC343TKT146

Dele Stock.: 107675

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 600mA, Spænding - Collector Emitter Breakdown (Max): 15V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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RN2107ACT(TPL3)
Toshiba Semiconductor and Storage

RN2107ACT(TPL3)

Dele Stock.: 2063

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1441ATE85LF
Toshiba Semiconductor and Storage

RN1441ATE85LF

Dele Stock.: 176769

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 300mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 5.6 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

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RN2108CT(TPL3)
Toshiba Semiconductor and Storage

RN2108CT(TPL3)

Dele Stock.: 2026

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

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RN1101ACT(TPL3)
Toshiba Semiconductor and Storage

RN1101ACT(TPL3)

Dele Stock.: 1962

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN1102MFV,L3F
Toshiba Semiconductor and Storage

RN1102MFV,L3F

Dele Stock.: 120698

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1414,LF
Toshiba Semiconductor and Storage

RN1414,LF

Dele Stock.: 112225

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2313(TE85L,F)
Toshiba Semiconductor and Storage

RN2313(TE85L,F)

Dele Stock.: 163677

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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NSBA143ZF3T5G
ON Semiconductor

NSBA143ZF3T5G

Dele Stock.: 157289

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJX4001RTF
ON Semiconductor

FJX4001RTF

Dele Stock.: 1966

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V,

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PDTA123ET,215
Nexperia USA Inc.

PDTA123ET,215

Dele Stock.: 106175

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

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PDTB123TS,126
NXP USA Inc.

PDTB123TS,126

Dele Stock.: 3227

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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PDTC143EK,115
NXP USA Inc.

PDTC143EK,115

Dele Stock.: 1932

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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PDTA143EK,115
NXP USA Inc.

PDTA143EK,115

Dele Stock.: 2057

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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PDTA144VK,115
NXP USA Inc.

PDTA144VK,115

Dele Stock.: 1942

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V,

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