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Transistorer - bipolar (BJT) - enkelt, præ-f

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  • Transistorer - bipolar (BJT) - enkelt, præ-f
RN1104,LF(CT
Toshiba Semiconductor and Storage

RN1104,LF(CT

Dele Stock.: 176974

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1116MFV,L3F
Toshiba Semiconductor and Storage

RN1116MFV,L3F

Dele Stock.: 1741

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage

RN2110ACT(TPL3)

Dele Stock.: 116110

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1309,LF
Toshiba Semiconductor and Storage

RN1309,LF

Dele Stock.: 1726

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ønskeseddel
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage

RN2112ACT(TPL3)

Dele Stock.: 133617

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1119MFV,L3F
Toshiba Semiconductor and Storage

RN1119MFV,L3F

Dele Stock.: 1717

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN2421(TE85L,F)
Toshiba Semiconductor and Storage

RN2421(TE85L,F)

Dele Stock.: 103457

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 800mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V,

Ønskeseddel
RN1301,LF
Toshiba Semiconductor and Storage

RN1301,LF

Dele Stock.: 114770

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage

RN2113ACT(TPL3)

Dele Stock.: 192815

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1113MFV,L3F
Toshiba Semiconductor and Storage

RN1113MFV,L3F

Dele Stock.: 1776

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN2105ACT(TPL3)
Toshiba Semiconductor and Storage

RN2105ACT(TPL3)

Dele Stock.: 181928

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage

RN2111ACT(TPL3)

Dele Stock.: 185360

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1132MFV,L3F
Toshiba Semiconductor and Storage

RN1132MFV,L3F

Dele Stock.: 1709

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 200 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1115MFV,L3F
Toshiba Semiconductor and Storage

RN1115MFV,L3F

Dele Stock.: 116839

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2103ACT(TPL3)
Toshiba Semiconductor and Storage

RN2103ACT(TPL3)

Dele Stock.: 125855

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN1118MFV,L3F
Toshiba Semiconductor and Storage

RN1118MFV,L3F

Dele Stock.: 3186

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN1406,LF
Toshiba Semiconductor and Storage

RN1406,LF

Dele Stock.: 138320

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2109MFV,L3F
Toshiba Semiconductor and Storage

RN2109MFV,L3F

Dele Stock.: 1723

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN1402,LF
Toshiba Semiconductor and Storage

RN1402,LF

Dele Stock.: 154084

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel