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Transistorer - bipolar (BJT) - RF

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2SC5087YTE85LF
Toshiba Semiconductor and Storage

2SC5087YTE85LF

Dele Stock.: 144

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 13dB, Effekt - maks: 150mW,

Ønskeseddel
2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5084-O(TE85L,F)

Dele Stock.: 170

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 11dB, Effekt - maks: 150mW,

Ønskeseddel
2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC4215-Y(TE85L,F)

Dele Stock.: 171976

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 30V, Frekvens - Overgang: 550MHz, Støjfigur (dB Typ @ f): 2dB ~ 5dB @ 100MHz, Gevinst: 17dB ~ 23dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5066-O,LF
Toshiba Semiconductor and Storage

2SC5066-O,LF

Dele Stock.: 111075

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Effekt - maks: 100mW,

Ønskeseddel
2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC5085-Y(TE85L,F)

Dele Stock.: 128600

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 11dB ~ 16.5dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5086-O,LF
Toshiba Semiconductor and Storage

2SC5086-O,LF

Dele Stock.: 121034

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Effekt - maks: 100mW,

Ønskeseddel
2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5065-O(TE85L,F)

Dele Stock.: 190

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Effekt - maks: 100mW,

Ønskeseddel
2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5085-O(TE85L,F)

Dele Stock.: 170

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Effekt - maks: 100mW,

Ønskeseddel
2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5095-O(TE85L,F)

Dele Stock.: 187

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.8dB @ 2GHz, Gevinst: 13dB ~ 7dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5086-Y,LF
Toshiba Semiconductor and Storage

2SC5086-Y,LF

Dele Stock.: 173074

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Effekt - maks: 100mW,

Ønskeseddel
2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage

2SC5095-R(TE85L,F)

Dele Stock.: 128

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.8dB @ 2GHz, Gevinst: 13dB ~ 7.5dB, Effekt - maks: 100mW,

Ønskeseddel
2SC4915-O,LF
Toshiba Semiconductor and Storage

2SC4915-O,LF

Dele Stock.: 124837

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 30V, Frekvens - Overgang: 550MHz, Støjfigur (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz, Gevinst: 17dB ~ 23dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5084YTE85LF
Toshiba Semiconductor and Storage

2SC5084YTE85LF

Dele Stock.: 152602

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 11dB, Effekt - maks: 150mW,

Ønskeseddel
2SC5087-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5087-O(TE85L,F)

Dele Stock.: 162523

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz, Effekt - maks: 150mW,

Ønskeseddel
2SC5066-Y,LF
Toshiba Semiconductor and Storage

2SC5066-Y,LF

Dele Stock.: 133840

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Effekt - maks: 100mW,

Ønskeseddel
2SC2714-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC2714-Y(TE85L,F)

Dele Stock.: 132303

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 30V, Frekvens - Overgang: 550MHz, Støjfigur (dB Typ @ f): 2.5dB @ 100MHz, Gevinst: 23dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5087R(TE85L,F)
Toshiba Semiconductor and Storage

2SC5087R(TE85L,F)

Dele Stock.: 156257

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 8GHz, Støjfigur (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz, Effekt - maks: 150mW,

Ønskeseddel
2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC5065-Y(TE85L,F)

Dele Stock.: 190913

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 12dB ~ 17dB, Effekt - maks: 100mW,

Ønskeseddel
2SC2714-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC2714-O(TE85L,F)

Dele Stock.: 167393

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 30V, Frekvens - Overgang: 550MHz, Støjfigur (dB Typ @ f): 2.5dB @ 100MHz, Gevinst: 23dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5088-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5088-O(TE85L,F)

Dele Stock.: 7295

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1dB @ 500MHz, Gevinst: 18dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5108-Y,LF
Toshiba Semiconductor and Storage

2SC5108-Y,LF

Dele Stock.: 4783

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 6GHz, Gevinst: 11dB, Effekt - maks: 100mW,

Ønskeseddel
2SC4915-Y,LF
Toshiba Semiconductor and Storage

2SC4915-Y,LF

Dele Stock.: 7101

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 30V, Frekvens - Overgang: 550MHz, Støjfigur (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz, Gevinst: 17dB ~ 23dB, Effekt - maks: 100mW,

Ønskeseddel
2SC5096-R,LF
Toshiba Semiconductor and Storage

2SC5096-R,LF

Dele Stock.: 7064

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 10V, Frekvens - Overgang: 10GHz, Støjfigur (dB Typ @ f): 1.4dB @ 1GHz, Gevinst: 1.4dB, Effekt - maks: 100mW,

Ønskeseddel
2SC4215-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC4215-O(TE85L,F)

Dele Stock.: 160292

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 30V, Frekvens - Overgang: 550MHz, Støjfigur (dB Typ @ f): 5dB @ 100MHz, Gevinst: 23dB, Effekt - maks: 100mW,

Ønskeseddel
MT3S111(TE85L,F)
Toshiba Semiconductor and Storage

MT3S111(TE85L,F)

Dele Stock.: 91

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 6V, Frekvens - Overgang: 11.5GHz, Støjfigur (dB Typ @ f): 1.2dB @ 1GHz, Gevinst: 12dB, Effekt - maks: 700mW,

Ønskeseddel
MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S111P(TE12L,F)

Dele Stock.: 18982

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 6V, Frekvens - Overgang: 8GHz, Støjfigur (dB Typ @ f): 1.25dB @ 1GHz, Gevinst: 10.5dB, Effekt - maks: 1W,

Ønskeseddel
MT3S113P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S113P(TE12L,F)

Dele Stock.: 4314

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 5.3V, Frekvens - Overgang: 7.7GHz, Støjfigur (dB Typ @ f): 1.45dB @ 1GHz, Gevinst: 10.5dB, Effekt - maks: 1.6W,

Ønskeseddel
MT3S113(TE85L,F)
Toshiba Semiconductor and Storage

MT3S113(TE85L,F)

Dele Stock.: 9921

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 5.3V, Frekvens - Overgang: 12.5GHz, Støjfigur (dB Typ @ f): 1.45dB @ 1GHz, Gevinst: 11.8dB, Effekt - maks: 800mW,

Ønskeseddel
MT3S20P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S20P(TE12L,F)

Dele Stock.: 4313

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.45dB @ 1GHz, Gevinst: 16.5dB, Effekt - maks: 1.8W,

Ønskeseddel
MT3S20TU(TE85L)
Toshiba Semiconductor and Storage

MT3S20TU(TE85L)

Dele Stock.: 135

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.45dB @ 20mA, 5V, Gevinst: 12dB, Effekt - maks: 900mW,

Ønskeseddel
MT3S113TU,LF
Toshiba Semiconductor and Storage

MT3S113TU,LF

Dele Stock.: 9992

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 5.3V, Frekvens - Overgang: 11.2GHz, Støjfigur (dB Typ @ f): 1.45dB @ 1GHz, Gevinst: 12.5dB, Effekt - maks: 900mW,

Ønskeseddel
MT3S16U(TE85L,F)
Toshiba Semiconductor and Storage

MT3S16U(TE85L,F)

Dele Stock.: 176440

Transistortype: NPN, Spænding - Collector Emitter Breakdown (Max): 5V, Frekvens - Overgang: 4GHz, Støjfigur (dB Typ @ f): 2.4dB @ 1GHz, Gevinst: 4.5dBi, Effekt - maks: 100mW,

Ønskeseddel
HN3C10FUTE85LF
Toshiba Semiconductor and Storage

HN3C10FUTE85LF

Dele Stock.: 7065

Transistortype: 2 NPN (Dual), Spænding - Collector Emitter Breakdown (Max): 12V, Frekvens - Overgang: 7GHz, Støjfigur (dB Typ @ f): 1.1dB @ 1GHz, Gevinst: 11.5dB, Effekt - maks: 200mW,

Ønskeseddel