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Transistorer - bipolar (BJT) - enkelt, præ-f

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  • Transistorer - bipolar (BJT) - enkelt, præ-f
RN2404TE85LF
Toshiba Semiconductor and Storage

RN2404TE85LF

Dele Stock.: 1976

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1402S,LF
Toshiba Semiconductor and Storage

RN1402S,LF

Dele Stock.: 1953

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2104MFV,L3F
Toshiba Semiconductor and Storage

RN2104MFV,L3F

Dele Stock.: 1980

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2402S,LF(D
Toshiba Semiconductor and Storage

RN2402S,LF(D

Dele Stock.: 1961

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2106(T5L,F,T)
Toshiba Semiconductor and Storage

RN2106(T5L,F,T)

Dele Stock.: 1986

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1104CT(TPL3)
Toshiba Semiconductor and Storage

RN1104CT(TPL3)

Dele Stock.: 1925

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel
RN2111CT(TPL3)
Toshiba Semiconductor and Storage

RN2111CT(TPL3)

Dele Stock.: 2043

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Ønskeseddel
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage

RN1105ACT(TPL3)

Dele Stock.: 1932

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1406S,LF(D
Toshiba Semiconductor and Storage

RN1406S,LF(D

Dele Stock.: 1944

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage

RN1108(T5L,F,T)

Dele Stock.: 2027

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage

RN2108ACT(TPL3)

Dele Stock.: 1975

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1316,LF
Toshiba Semiconductor and Storage

RN1316,LF

Dele Stock.: 199880

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2113CT(TPL3)
Toshiba Semiconductor and Storage

RN2113CT(TPL3)

Dele Stock.: 1959

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Ønskeseddel
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

RN1108ACT(TPL3)

Dele Stock.: 1901

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2112,LF(CT
Toshiba Semiconductor and Storage

RN2112,LF(CT

Dele Stock.: 9941

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN2103MFV,L3F
Toshiba Semiconductor and Storage

RN2103MFV,L3F

Dele Stock.: 1966

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN1103CT(TPL3)
Toshiba Semiconductor and Storage

RN1103CT(TPL3)

Dele Stock.: 1955

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Ønskeseddel
RN1413(TE85L,F)
Toshiba Semiconductor and Storage

RN1413(TE85L,F)

Dele Stock.: 169265

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage

RN1111ACT(TPL3)

Dele Stock.: 1945

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage

RN2118(T5L,F,T)

Dele Stock.: 1956

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN1108CT(TPL3)
Toshiba Semiconductor and Storage

RN1108CT(TPL3)

Dele Stock.: 1979

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage

RN1106ACT(TPL3)

Dele Stock.: 2028

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2102ACT(TPL3)
Toshiba Semiconductor and Storage

RN2102ACT(TPL3)

Dele Stock.: 1977

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2104CT(TPL3)
Toshiba Semiconductor and Storage

RN2104CT(TPL3)

Dele Stock.: 1987

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel
RN1109CT(TPL3)
Toshiba Semiconductor and Storage

RN1109CT(TPL3)

Dele Stock.: 1950

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Ønskeseddel
RN2104ACT(TPL3)
Toshiba Semiconductor and Storage

RN2104ACT(TPL3)

Dele Stock.: 2045

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2103CT(TPL3)
Toshiba Semiconductor and Storage

RN2103CT(TPL3)

Dele Stock.: 3230

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Ønskeseddel
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage

RN1104ACT(TPL3)

Dele Stock.: 1956

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2303(TE85L,F)
Toshiba Semiconductor and Storage

RN2303(TE85L,F)

Dele Stock.: 126325

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN2107ACT(TPL3)
Toshiba Semiconductor and Storage

RN2107ACT(TPL3)

Dele Stock.: 2063

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1441ATE85LF
Toshiba Semiconductor and Storage

RN1441ATE85LF

Dele Stock.: 176769

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 300mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 5.6 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Ønskeseddel
RN2108CT(TPL3)
Toshiba Semiconductor and Storage

RN2108CT(TPL3)

Dele Stock.: 2026

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage

RN1101ACT(TPL3)

Dele Stock.: 1962

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel
RN1102MFV,L3F
Toshiba Semiconductor and Storage

RN1102MFV,L3F

Dele Stock.: 120698

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN1414,LF
Toshiba Semiconductor and Storage

RN1414,LF

Dele Stock.: 112225

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2313(TE85L,F)
Toshiba Semiconductor and Storage

RN2313(TE85L,F)

Dele Stock.: 163677

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel