Transistorer - bipolar (BJT) - enkelt, præ-f | Diskrete halvlederprodukter | 6

RN1112(T5L,F,T)

Dele Stock.: 1924

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1106,LF(CT

Dele Stock.: 126227

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1101CT(TPL3)

Dele Stock.: 1912

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2315TE85LF

Dele Stock.: 100188

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1112ACT(TPL3)

Dele Stock.: 1954

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2101ACT(TPL3)

Dele Stock.: 1987

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1105CT(TPL3)

Dele Stock.: 1976

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2105CT(TPL3)

Dele Stock.: 1970

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1111CT(TPL3)

Dele Stock.: 1984

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1109ACT(TPL3)

Dele Stock.: 2177

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1103ACT(TPL3)

Dele Stock.: 1902

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2404,LF

Dele Stock.: 9904

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1306,LF

Dele Stock.: 116634

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1444ATE85LF

Dele Stock.: 1960

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 300mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1107ACT(TPL3)

Dele Stock.: 2029

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2110CT(TPL3)

Dele Stock.: 1997

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2107MFV,L3F

Dele Stock.: 128621

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1107CT(TPL3)

Dele Stock.: 1985

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1109MFV,L3F

Dele Stock.: 1935

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1112CT(TPL3)

Dele Stock.: 1956

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1113CT(TPL3)

Dele Stock.: 2014

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1102,LF(CT

Dele Stock.: 176393

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1113(T5L,F,T)

Dele Stock.: 158736

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1308,LF

Dele Stock.: 147458

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2106CT(TPL3)

Dele Stock.: 1999

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1106MFV(TL3,T)

Dele Stock.: 1905

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2117(T5L,F,T)

Dele Stock.: 1959

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2109CT(TPL3)

Dele Stock.: 1945

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2316(TE85L,F)

Dele Stock.: 159037

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2102CT(TPL3)

Dele Stock.: 1965

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2107CT(TPL3)

Dele Stock.: 1933

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2101CT(TPL3)

Dele Stock.: 3234

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1117(T5L,F,T)

Dele Stock.: 1981

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1305,LF

Dele Stock.: 184462

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN2106ACT(TPL3)

Dele Stock.: 140630

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1101MFV,L3F

Dele Stock.: 164879

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel