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Transistorer - bipolar (BJT) - arrays, præ-f

XN0A31100L
Panasonic Electronic Components

XN0A31100L

Dele Stock.: 1473

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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UP04210G0L
Panasonic Electronic Components

UP04210G0L

Dele Stock.: 1485

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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XP0421400L
Panasonic Electronic Components

XP0421400L

Dele Stock.: 1409

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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XP0121M00L
Panasonic Electronic Components

XP0121M00L

Dele Stock.: 3225

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DMG264120R
Panasonic Electronic Components

DMG264120R

Dele Stock.: 132052

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V,

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XN0A31200L
Panasonic Electronic Components

XN0A31200L

Dele Stock.: 1435

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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UP0421600L
Panasonic Electronic Components

UP0421600L

Dele Stock.: 1470

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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XN0121300L
Panasonic Electronic Components

XN0121300L

Dele Stock.: 1399

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UP0421000L
Panasonic Electronic Components

UP0421000L

Dele Stock.: 1476

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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XN0431100L
Panasonic Electronic Components

XN0431100L

Dele Stock.: 1396

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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DMG264010R
Panasonic Electronic Components

DMG264010R

Dele Stock.: 111444

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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DMC561050R
Panasonic Electronic Components

DMC561050R

Dele Stock.: 101821

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5236DW1T1G
ON Semiconductor

MUN5236DW1T1G

Dele Stock.: 90859

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5112DW1T1G
ON Semiconductor

MUN5112DW1T1G

Dele Stock.: 58075

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC123TDP6T5G
ON Semiconductor

NSBC123TDP6T5G

Dele Stock.: 120018

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSTB1003DXV5T1G
ON Semiconductor

NSTB1003DXV5T1G

Dele Stock.: 1527

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual),

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EMA6DXV5T5G
ON Semiconductor

EMA6DXV5T5G

Dele Stock.: 1485

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC114EPDXV6T1G
ON Semiconductor

NSBC114EPDXV6T1G

Dele Stock.: 138112

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MUN5114DW1T1G
ON Semiconductor

MUN5114DW1T1G

Dele Stock.: 128956

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UMA4NT1
ON Semiconductor

UMA4NT1

Dele Stock.: 1408

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBA143ZDXV6T1
ON Semiconductor

NSBA143ZDXV6T1

Dele Stock.: 1412

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5312DW1T1G
ON Semiconductor

SMUN5312DW1T1G

Dele Stock.: 126786

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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DCX114YH-7
Diodes Incorporated

DCX114YH-7

Dele Stock.: 104176

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

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DCX100NS-7
Diodes Incorporated

DCX100NS-7

Dele Stock.: 1443

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 50mA, 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 33 @ 5mA, 5V,

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UMC5NQ-7
Diodes Incorporated

UMC5NQ-7

Dele Stock.: 214

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DDC144EH-7
Diodes Incorporated

DDC144EH-7

Dele Stock.: 172395

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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PBLS1503V,115
NXP USA Inc.

PBLS1503V,115

Dele Stock.: 1388

Transistortype: 1 NPN Pre-Biased, 1 PNP, Strøm - Samler (Ic) (maks.): 100mA, 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, 15V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V,

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PUMB1/DG/B3,115
Nexperia USA Inc.

PUMB1/DG/B3,115

Dele Stock.: 1486

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

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PUMH7,115
Nexperia USA Inc.

PUMH7,115

Dele Stock.: 182288

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

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PRMH13Z
Nexperia USA Inc.

PRMH13Z

Dele Stock.: 199165

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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PUMB24,115
Nexperia USA Inc.

PUMB24,115

Dele Stock.: 153021

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 20mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

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UMF5NTR
Rohm Semiconductor

UMF5NTR

Dele Stock.: 165147

Transistortype: 1 NPN Pre-Biased, 1 PNP, Strøm - Samler (Ic) (maks.): 100mA, 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, 12V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V,

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IMD16AT108
Rohm Semiconductor

IMD16AT108

Dele Stock.: 131676

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, 2.2 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V,

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IMD10AT108
Rohm Semiconductor

IMD10AT108

Dele Stock.: 169443

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, 100 Ohms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V,

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RN1906,LF
Toshiba Semiconductor and Storage

RN1906,LF

Dele Stock.: 1510

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2711JE(TE85L,F)
Toshiba Semiconductor and Storage

RN2711JE(TE85L,F)

Dele Stock.: 139401

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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