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Transistorer - bipolar (BJT) - arrays, præ-f

UP0411M00L
Panasonic Electronic Components

UP0411M00L

Dele Stock.: 1396

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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XP0111600L
Panasonic Electronic Components

XP0111600L

Dele Stock.: 3153

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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DMC261060R
Panasonic Electronic Components

DMC261060R

Dele Stock.: 158117

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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XN0111600L
Panasonic Electronic Components

XN0111600L

Dele Stock.: 3151

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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XN0F25600L
Panasonic Electronic Components

XN0F25600L

Dele Stock.: 3218

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 600mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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NP0H3A300A
Panasonic Electronic Components

NP0H3A300A

Dele Stock.: 3167

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DMA961030R
Panasonic Electronic Components

DMA961030R

Dele Stock.: 194090

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UP0411200L
Panasonic Electronic Components

UP0411200L

Dele Stock.: 1415

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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DDA124EH-7
Diodes Incorporated

DDA124EH-7

Dele Stock.: 108616

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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DCX124EH-7
Diodes Incorporated

DCX124EH-7

Dele Stock.: 110188

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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DDC114TU-7
Diodes Incorporated

DDC114TU-7

Dele Stock.: 1373

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDA122TU-7-F
Diodes Incorporated

DDA122TU-7-F

Dele Stock.: 141385

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 220 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDC143TU-7-F
Diodes Incorporated

DDC143TU-7-F

Dele Stock.: 106635

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDA123JU-7
Diodes Incorporated

DDA123JU-7

Dele Stock.: 1441

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DCX114EU-7
Diodes Incorporated

DCX114EU-7

Dele Stock.: 1475

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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DDA142TH-7
Diodes Incorporated

DDA142TH-7

Dele Stock.: 159342

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 470 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDC142TU-7-F
Diodes Incorporated

DDC142TU-7-F

Dele Stock.: 186578

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 470 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DCX123JU-7
Diodes Incorporated

DCX123JU-7

Dele Stock.: 1443

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2966FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2966FE(TE85L,F)

Dele Stock.: 3147

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN4908(T5L,F,T)
Toshiba Semiconductor and Storage

RN4908(T5L,F,T)

Dele Stock.: 1464

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2510(TE85L,F)
Toshiba Semiconductor and Storage

RN2510(TE85L,F)

Dele Stock.: 165485

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2963FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2963FE(TE85L,F)

Dele Stock.: 1465

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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EMB6T2R
Rohm Semiconductor

EMB6T2R

Dele Stock.: 182976

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 30mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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EMA8T2R
Rohm Semiconductor

EMA8T2R

Dele Stock.: 102753

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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EMG11T2R
Rohm Semiconductor

EMG11T2R

Dele Stock.: 155071

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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FMG11AT148
Rohm Semiconductor

FMG11AT148

Dele Stock.: 149456

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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QSH29TR
Rohm Semiconductor

QSH29TR

Dele Stock.: 194863

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 70V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V,

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NSBC115EDXV6T1G
ON Semiconductor

NSBC115EDXV6T1G

Dele Stock.: 129082

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5316DW1T1G
ON Semiconductor

NSVMUN5316DW1T1G

Dele Stock.: 160200

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSB1706DMW5T1G
ON Semiconductor

NSB1706DMW5T1G

Dele Stock.: 136591

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5133DW1T1G
ON Semiconductor

MUN5133DW1T1G

Dele Stock.: 183679

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5316DW1T1
ON Semiconductor

MUN5316DW1T1

Dele Stock.: 1532

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSM21156DW6T1G
ON Semiconductor

NSM21156DW6T1G

Dele Stock.: 1463

Transistortype: 1 NPN Pre-Biased, 1 PNP, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, 65V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V,

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MUN5130DW1T1G
ON Semiconductor

MUN5130DW1T1G

Dele Stock.: 181618

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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PUMD30,115
Nexperia USA Inc.

PUMD30,115

Dele Stock.: 116876

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

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PUMD2/DG/B3,115
Nexperia USA Inc.

PUMD2/DG/B3,115

Dele Stock.: 1523

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

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