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Transistorer - bipolar (BJT) - enkelt, præ-f

RN1106MFV(TL3,T)
Toshiba Semiconductor and Storage

RN1106MFV(TL3,T)

Dele Stock.: 1905

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2117(T5L,F,T)
Toshiba Semiconductor and Storage

RN2117(T5L,F,T)

Dele Stock.: 1959

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN2109CT(TPL3)
Toshiba Semiconductor and Storage

RN2109CT(TPL3)

Dele Stock.: 1945

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 50mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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RN2316(TE85L,F)
Toshiba Semiconductor and Storage

RN2316(TE85L,F)

Dele Stock.: 159037

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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UNR9216G0L
Panasonic Electronic Components

UNR9216G0L

Dele Stock.: 1938

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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DRC9115T0L
Panasonic Electronic Components

DRC9115T0L

Dele Stock.: 194061

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR921NG0L
Panasonic Electronic Components

UNR921NG0L

Dele Stock.: 195324

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR9117G0L
Panasonic Electronic Components

UNR9117G0L

Dele Stock.: 1941

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR9117J0L
Panasonic Electronic Components

UNR9117J0L

Dele Stock.: 1968

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR91A6G0L
Panasonic Electronic Components

UNR91A6G0L

Dele Stock.: 1952

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 80mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR9116G0L
Panasonic Electronic Components

UNR9116G0L

Dele Stock.: 1945

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR212200L
Panasonic Electronic Components

UNR212200L

Dele Stock.: 107994

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V,

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UNR5117G0L
Panasonic Electronic Components

UNR5117G0L

Dele Stock.: 1967

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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PDTA123EK,115
NXP USA Inc.

PDTA123EK,115

Dele Stock.: 1923

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

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PDTA114TS,126
NXP USA Inc.

PDTA114TS,126

Dele Stock.: 1975

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

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PDTC123TE,115
NXP USA Inc.

PDTC123TE,115

Dele Stock.: 2001

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

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PDTC144EK,115
NXP USA Inc.

PDTC144EK,115

Dele Stock.: 1961

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

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PDTB113ZK,115
NXP USA Inc.

PDTB113ZK,115

Dele Stock.: 1964

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

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PDTA144EK,135
NXP USA Inc.

PDTA144EK,135

Dele Stock.: 1983

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

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PDTC143ET,215
Nexperia USA Inc.

PDTC143ET,215

Dele Stock.: 185200

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DDTC143TKA-7-F
Diodes Incorporated

DDTC143TKA-7-F

Dele Stock.: 3252

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC143FCA-7-F
Diodes Incorporated

DDTC143FCA-7-F

Dele Stock.: 185479

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

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DTC124EUAT106
Rohm Semiconductor

DTC124EUAT106

Dele Stock.: 134956

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 30mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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DTA023JMT2L
Rohm Semiconductor

DTA023JMT2L

Dele Stock.: 195210

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DTC314TUT106
Rohm Semiconductor

DTC314TUT106

Dele Stock.: 1978

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 600mA, Spænding - Collector Emitter Breakdown (Max): 15V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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DTC623TKT146
Rohm Semiconductor

DTC623TKT146

Dele Stock.: 117383

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 600mA, Spænding - Collector Emitter Breakdown (Max): 20V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V,

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DTC114GKAT146
Rohm Semiconductor

DTC114GKAT146

Dele Stock.: 109354

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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NSVDTC143ZM3T5G
ON Semiconductor

NSVDTC143ZM3T5G

Dele Stock.: 168028

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5135T1
ON Semiconductor

MUN5135T1

Dele Stock.: 1893

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MMUN2132LT1G
ON Semiconductor

MMUN2132LT1G

Dele Stock.: 187299

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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FJV3103RMTF
ON Semiconductor

FJV3103RMTF

Dele Stock.: 158642

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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FJNS3201RTA
ON Semiconductor

FJNS3201RTA

Dele Stock.: 2058

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V,

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MUN2114T1G
ON Semiconductor

MUN2114T1G

Dele Stock.: 168998

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA144EF3T5G
ON Semiconductor

NSBA144EF3T5G

Dele Stock.: 142955

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN2212T1G
ON Semiconductor

NSVMUN2212T1G

Dele Stock.: 134794

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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FJX3011RTF
ON Semiconductor

FJX3011RTF

Dele Stock.: 2168

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 40V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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