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Transistorer - bipolar (BJT) - enkelt, præ-f

DRC9152Z0L
Panasonic Electronic Components

DRC9152Z0L

Dele Stock.: 109876

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 510 Ohms, Modstand - Emitterbase (R2): 5.1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR511H00L
Panasonic Electronic Components

UNR511H00L

Dele Stock.: 2234

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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DRC9143X0L
Panasonic Electronic Components

DRC9143X0L

Dele Stock.: 115860

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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DRC3152Z0L
Panasonic Electronic Components

DRC3152Z0L

Dele Stock.: 167380

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 510 Ohms, Modstand - Emitterbase (R2): 5.1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR411400A
Panasonic Electronic Components

UNR411400A

Dele Stock.: 160191

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DRA9143T0L
Panasonic Electronic Components

DRA9143T0L

Dele Stock.: 114238

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR9214J0L
Panasonic Electronic Components

UNR9214J0L

Dele Stock.: 3219

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR515400L
Panasonic Electronic Components

UNR515400L

Dele Stock.: 2198

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 30V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR222200L
Panasonic Electronic Components

UNR222200L

Dele Stock.: 2222

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V,

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DDTC123YCA-7
Diodes Incorporated

DDTC123YCA-7

Dele Stock.: 2203

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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DDTB113ZC-7-F
Diodes Incorporated

DDTB113ZC-7-F

Dele Stock.: 176561

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DDTC115TE-7
Diodes Incorporated

DDTC115TE-7

Dele Stock.: 1631

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC125TUA-7-F
Diodes Incorporated

DDTC125TUA-7-F

Dele Stock.: 199870

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 200 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC115EE-7
Diodes Incorporated

DDTC115EE-7

Dele Stock.: 3301

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V,

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DDTC144GCA-7
Diodes Incorporated

DDTC144GCA-7

Dele Stock.: 2189

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DDTA143EUA-7
Diodes Incorporated

DDTA143EUA-7

Dele Stock.: 2190

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V,

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DDTA123YCA-7
Diodes Incorporated

DDTA123YCA-7

Dele Stock.: 2106

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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DDTC123EE-7-F
Diodes Incorporated

DDTC123EE-7-F

Dele Stock.: 144236

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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DDTB143EU-7-F
Diodes Incorporated

DDTB143EU-7-F

Dele Stock.: 175161

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V,

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DDTA144VCA-7
Diodes Incorporated

DDTA144VCA-7

Dele Stock.: 2128

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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DDTC142TU-7
Diodes Incorporated

DDTC142TU-7

Dele Stock.: 2154

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 470 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC144GUA-7
Diodes Incorporated

DDTC144GUA-7

Dele Stock.: 2142

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DDTA114YCA-7-F
Diodes Incorporated

DDTA114YCA-7-F

Dele Stock.: 187870

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

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DDTC144WCA-7
Diodes Incorporated

DDTC144WCA-7

Dele Stock.: 2150

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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RN2309(TE85L,F)
Toshiba Semiconductor and Storage

RN2309(TE85L,F)

Dele Stock.: 2193

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN2114(TE85L,F)
Toshiba Semiconductor and Storage

RN2114(TE85L,F)

Dele Stock.: 128

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2130MFV,L3F
Toshiba Semiconductor and Storage

RN2130MFV,L3F

Dele Stock.: 188

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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DTC114YKA-TP
Micro Commercial Co

DTC114YKA-TP

Dele Stock.: 2265

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DTC114TUA-TP
Micro Commercial Co

DTC114TUA-TP

Dele Stock.: 137715

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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NSBC144WF3T5G
ON Semiconductor

NSBC144WF3T5G

Dele Stock.: 153684

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5113T3G
ON Semiconductor

MUN5113T3G

Dele Stock.: 163881

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DTA144TET1G
ON Semiconductor

DTA144TET1G

Dele Stock.: 171551

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V,

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FJNS3215RBU
ON Semiconductor

FJNS3215RBU

Dele Stock.: 2305

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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MMUN2241LT1
ON Semiconductor

MMUN2241LT1

Dele Stock.: 2243

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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PDTA144VE,115
NXP USA Inc.

PDTA144VE,115

Dele Stock.: 2201

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V,

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PDTC124EE,115
NXP USA Inc.

PDTC124EE,115

Dele Stock.: 2216

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

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