Transistorer - bipolar (BJT) - arrays, præ-f

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Transistorer - bipolar (BJT) - arrays, præ-f

Toshiba Semiconductor and Storage

RN2906,LF

Dele Stock.: 138883

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN2908(T5L,F,T)

Toshiba Semiconductor and Storage

RN2908(T5L,F,T)

Dele Stock.: 1489

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN2901(T5L,F,T)

Toshiba Semiconductor and Storage

RN2901(T5L,F,T)

Dele Stock.: 1507

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

RN1970FE(TE85L,F)

Toshiba Semiconductor and Storage

RN1970FE(TE85L,F)

Dele Stock.: 1480

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN2603(TE85L,F)

Toshiba Semiconductor and Storage

RN2603(TE85L,F)

Dele Stock.: 181191

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel

RN4903(T5L,F,T)

Toshiba Semiconductor and Storage

RN4903(T5L,F,T)

Dele Stock.: 1463

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel

RN2968FE(TE85L,F)

Toshiba Semiconductor and Storage

RN2968FE(TE85L,F)

Dele Stock.: 1523

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN1968(TE85L,F)

Toshiba Semiconductor and Storage

RN1968(TE85L,F)

Dele Stock.: 134854

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN4982,LF(CT

Dele Stock.: 158270

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

RN4606(TE85L,F)

Toshiba Semiconductor and Storage

RN4606(TE85L,F)

Dele Stock.: 9902

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN1905(T5L,F,T)

Toshiba Semiconductor and Storage

RN1905(T5L,F,T)

Dele Stock.: 1375

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1911FETE85LF

Dele Stock.: 142375

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN4902FE(TE85L,F)

Toshiba Semiconductor and Storage

RN4902FE(TE85L,F)

Dele Stock.: 1489

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

RN1908(T5L,F,T)

Toshiba Semiconductor and Storage

RN1908(T5L,F,T)

Dele Stock.: 5402

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN2502(TE85L,F)

Toshiba Semiconductor and Storage

RN2502(TE85L,F)

Dele Stock.: 9911

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

RN2910(T5L,F,T)

Toshiba Semiconductor and Storage

RN2910(T5L,F,T)

Dele Stock.: 1510

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN2706JE(TE85L,F)

Toshiba Semiconductor and Storage

RN2706JE(TE85L,F)

Dele Stock.: 185153

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN4986(T5L,F,T)

Toshiba Semiconductor and Storage

RN4986(T5L,F,T)

Dele Stock.: 1620

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN1968FE(TE85L,F)

Toshiba Semiconductor and Storage

RN1968FE(TE85L,F)

Dele Stock.: 3218

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN2902FE(T5L,F,T)

Toshiba Semiconductor and Storage

RN2902FE(T5L,F,T)

Dele Stock.: 1475

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel

RN1607(TE85L,F)

Toshiba Semiconductor and Storage

RN1607(TE85L,F)

Dele Stock.: 116281

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN2712JE(TE85L,F)

Toshiba Semiconductor and Storage

RN2712JE(TE85L,F)

Dele Stock.: 178049

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage

RN1906FE(T5L,F,T)

Dele Stock.: 1636

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN1905,LF

Dele Stock.: 1491

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN1961FE(TE85L,F)

Toshiba Semiconductor and Storage

RN1961FE(TE85L,F)

Dele Stock.: 1446

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

RN1910FE(T5L,F,T)

Toshiba Semiconductor and Storage

RN1910FE(T5L,F,T)

Dele Stock.: 1466

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

Toshiba Semiconductor and Storage

RN4905T5LFT

Dele Stock.: 3212

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN4904(T5L,F,T)

Toshiba Semiconductor and Storage

RN4904(T5L,F,T)

Dele Stock.: 1532

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN1501(TE85L,F)

Toshiba Semiconductor and Storage

RN1501(TE85L,F)

Dele Stock.: 179912

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel

RN2971(TE85L,F)

Toshiba Semiconductor and Storage

RN2971(TE85L,F)

Dele Stock.: 187083

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN4610(TE85L,F)

Toshiba Semiconductor and Storage

RN4610(TE85L,F)

Dele Stock.: 196797

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN4990(T5L,F,T)

Toshiba Semiconductor and Storage

RN4990(T5L,F,T)

Dele Stock.: 196989

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN1909(T5L,F,T)

Toshiba Semiconductor and Storage

RN1909(T5L,F,T)

Dele Stock.: 1368

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel

RN1967FE(TE85L,F)

Toshiba Semiconductor and Storage

RN1967FE(TE85L,F)

Dele Stock.: 1500

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

RN2713JE(TE85L,F)

Toshiba Semiconductor and Storage

RN2713JE(TE85L,F)

Dele Stock.: 125460

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel

RN2966FE(TE85L,F)

Toshiba Semiconductor and Storage

RN2966FE(TE85L,F)

Dele Stock.: 3147

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel

196

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