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Transistorer - bipolar (BJT) - arrays, præ-f

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  • Transistorer - bipolar (BJT) - arrays, præ-f
RN2608(TE85L,F)
Toshiba Semiconductor and Storage

RN2608(TE85L,F)

Dele Stock.: 98

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2605(TE85L,F)
Toshiba Semiconductor and Storage

RN2605(TE85L,F)

Dele Stock.: 173

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1901FETE85LF
Toshiba Semiconductor and Storage

RN1901FETE85LF

Dele Stock.: 106

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel
RN4602TE85LF
Toshiba Semiconductor and Storage

RN4602TE85LF

Dele Stock.: 138

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN1511(TE85L,F)
Toshiba Semiconductor and Storage

RN1511(TE85L,F)

Dele Stock.: 136

Transistortype: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN2963(TE85L,F)
Toshiba Semiconductor and Storage

RN2963(TE85L,F)

Dele Stock.: 77

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN1610(TE85L,F)
Toshiba Semiconductor and Storage

RN1610(TE85L,F)

Dele Stock.: 111

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1964TE85LF
Toshiba Semiconductor and Storage

RN1964TE85LF

Dele Stock.: 84

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage

RN2703JE(TE85L,F)

Dele Stock.: 92

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN4603(TE85L,F)
Toshiba Semiconductor and Storage

RN4603(TE85L,F)

Dele Stock.: 170

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN1905,LF(CT
Toshiba Semiconductor and Storage

RN1905,LF(CT

Dele Stock.: 103003

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2903,LF(CT
Toshiba Semiconductor and Storage

RN2903,LF(CT

Dele Stock.: 185995

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN4609(TE85L,F)
Toshiba Semiconductor and Storage

RN4609(TE85L,F)

Dele Stock.: 95

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN2965(TE85L,F)
Toshiba Semiconductor and Storage

RN2965(TE85L,F)

Dele Stock.: 100

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1502(TE85L,F)
Toshiba Semiconductor and Storage

RN1502(TE85L,F)

Dele Stock.: 162

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2505TE85LF
Toshiba Semiconductor and Storage

RN2505TE85LF

Dele Stock.: 95

Transistortype: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2911FE(TE85L,F)

Dele Stock.: 89

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN4907,LF
Toshiba Semiconductor and Storage

RN4907,LF

Dele Stock.: 195313

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN4607(TE85L,F)
Toshiba Semiconductor and Storage

RN4607(TE85L,F)

Dele Stock.: 95

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN4901,LF(CT
Toshiba Semiconductor and Storage

RN4901,LF(CT

Dele Stock.: 185851

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel
RN4905,LF(CT
Toshiba Semiconductor and Storage

RN4905,LF(CT

Dele Stock.: 115

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2610(TE85L,F)
Toshiba Semiconductor and Storage

RN2610(TE85L,F)

Dele Stock.: 94

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage

RN1703JE(TE85L,F)

Dele Stock.: 155

Transistortype: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage

RN2708JE(TE85L,F)

Dele Stock.: 101

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1601(TE85L,F)
Toshiba Semiconductor and Storage

RN1601(TE85L,F)

Dele Stock.: 91

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Ønskeseddel
RN1902,LF(CT
Toshiba Semiconductor and Storage

RN1902,LF(CT

Dele Stock.: 160819

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage

RN2707JE(TE85L,F)

Dele Stock.: 113

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN2602(TE85L,F)
Toshiba Semiconductor and Storage

RN2602(TE85L,F)

Dele Stock.: 105554

Transistortype: 2 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Ønskeseddel
RN1604(TE85L,F)
Toshiba Semiconductor and Storage

RN1604(TE85L,F)

Dele Stock.: 90

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1706JE(TE85L,F)
Toshiba Semiconductor and Storage

RN1706JE(TE85L,F)

Dele Stock.: 128509

Transistortype: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN1608(TE85L,F)
Toshiba Semiconductor and Storage

RN1608(TE85L,F)

Dele Stock.: 103

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel
RN4910,LF
Toshiba Semiconductor and Storage

RN4910,LF

Dele Stock.: 104942

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN1503(TE85L,F)
Toshiba Semiconductor and Storage

RN1503(TE85L,F)

Dele Stock.: 1865

Transistortype: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN1910FE,LF(CT
Toshiba Semiconductor and Storage

RN1910FE,LF(CT

Dele Stock.: 119363

Transistortype: 2 NPN - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Ønskeseddel
RN4989(T5L,F,T)
Toshiba Semiconductor and Storage

RN4989(T5L,F,T)

Dele Stock.: 1626

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Ønskeseddel
RN4906,LF
Toshiba Semiconductor and Storage

RN4906,LF

Dele Stock.: 1441

Transistortype: 1 NPN, 1 PNP - Pre-Biased (Dual), Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Ønskeseddel