Sensing Distance: 0.039" (1mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 35V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.039" (1mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.039" (1mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 20V, Strøm - Samler (Ic) (maks.): 30mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.118" (3mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.098" (2.5mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.039" (1mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 35V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 30mA, Udgangstype: Phototransistor,