Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 50mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Photodarlington,
Sensing Distance: 0.200" (5.08mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 50V, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.080" (2.03mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 24V, Strøm - Samler (Ic) (maks.): 25mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 25mA, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Transistor,
Sensing Distance: 0.200" (5.08mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - DC fremad (hvis) (maks.): 100mA, Udgangstype: Photodarlington,
Sensing Distance: 0.250" (6.35mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - Samler (Ic) (maks.): 25mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Distance: 0.050" (1.27mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - Samler (Ic) (maks.): 125mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Distance: 0.149" (3.8mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 6mA, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Phototransistor,
Sensing Distance: 0.200" (5.08mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 24V, Strøm - DC fremad (hvis) (maks.): 100mA, Udgangstype: Phototransistor,
Sensing Distance: 0.050" (1.27mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 25mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Phototransistor,
Sensing Distance: 0.300" (7.62mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Transistor, Base-Emitter Resistor,
Sensing Distance: 0.149" (3.8mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 25mA, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Phototransistor,
Sensing Distance: 0.220" (5.59mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 24V, Strøm - Samler (Ic) (maks.): 30mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
