Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.236" (6mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.028" (0.7mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 35V, Strøm - Samler (Ic) (maks.): 50mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Distance: 0.050" (1.27mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - Samler (Ic) (maks.): 125mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Distance: 0.149" (3.8mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 6mA, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Phototransistor,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Photodarlington,
Sensing Distance: 0.150" (3.81mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Transistor, Base-Emitter Resistor,
Sensing Distance: 0.200" (5.08mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 24V, Strøm - DC fremad (hvis) (maks.): 100mA, Udgangstype: Phototransistor,
Sensing Distance: 0.05" (1.27mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 24V, Strøm - Samler (Ic) (maks.): 25mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 1" (25.4mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.15" (3.8mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 40mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.050" (1.27mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - Samler (Ic) (maks.): 30mA, Strøm - DC fremad (hvis) (maks.): 60mA, Udgangstype: Phototransistor,
Sensing Distance: 0.250" (6.35mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 15V, Strøm - Samler (Ic) (maks.): 30mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Photodarlington,
Sensing Distance: 0.250" (6.35mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 30mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.2" (5.08mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 30mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 393.701" (10m), Sensing Method: Reflective,
Sensing Distance: 0.394" ~ 0.787" (10mm ~ 20mm) ADJ, Sensing Method: Reflective, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: PIN Photodiode,
Sensing Distance: 0.210" (5.33mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 2.25V, Strøm - Samler (Ic) (maks.): 100µA, Strøm - DC fremad (hvis) (maks.): 40mA, Udgangstype: Phototransistor,
Sensing Distance: 1.5mm, Sensing Method: Reflective, Strøm - DC fremad (hvis) (maks.): 60mA, Udgangstype: Photodiode,
Sensing Distance: 1.5mm, Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 20V, Strøm - Samler (Ic) (maks.): 50mA, Strøm - DC fremad (hvis) (maks.): 30mA, Udgangstype: Phototransistor,
Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 35V, Strøm - Samler (Ic) (maks.): 15mA, Strøm - DC fremad (hvis) (maks.): 30mA, Udgangstype: Phototransistor,
Sensing Distance: 0.039" ~ 0.197" (1mm ~ 5mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 10mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.118" (3mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 60mA, Udgangstype: Phototransistor,
Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 40mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.118" (3mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.098" (2.5mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.039" (1mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 35V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.197" (5mm), Sensing Method: Reflective, Strøm - Samler (Ic) (maks.): 100mA, Strøm - DC fremad (hvis) (maks.): 100mA, Udgangstype: Photodiode,
Sensing Distance: 0.178" (4.5mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.197" (5mm), Sensing Method: Reflective, Spænding - Collector Emitter Breakdown (Max): 30V, Strøm - Samler (Ic) (maks.): 20mA, Strøm - DC fremad (hvis) (maks.): 50mA, Udgangstype: Phototransistor,
Sensing Distance: 0.079" ~ 0.866" (2mm ~ 22mm) ADJ, Sensing Method: Reflective, Udgangstype: Photodiode,
