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Transistorer - bipolar (BJT) - enkelt, præ-f

DTA114WSATP
Rohm Semiconductor

DTA114WSATP

Dele Stock.: 3246

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V,

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DTC143ESATP
Rohm Semiconductor

DTC143ESATP

Dele Stock.: 2210

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTDG23YPT100
Rohm Semiconductor

DTDG23YPT100

Dele Stock.: 169941

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 1A, Spænding - Collector Emitter Breakdown (Max): 60V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V,

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DDTC144EE-7
Diodes Incorporated

DDTC144EE-7

Dele Stock.: 3296

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DDTD142TU-7
Diodes Incorporated

DDTD142TU-7

Dele Stock.: 2176

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 470 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

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DDTB122TC-7-F
Diodes Incorporated

DDTB122TC-7-F

Dele Stock.: 115223

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 500mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 220 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

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DDTA122TE-7-F
Diodes Incorporated

DDTA122TE-7-F

Dele Stock.: 142524

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 220 Ohms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTA143ZCA-7
Diodes Incorporated

DDTA143ZCA-7

Dele Stock.: 2105

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DDTC123EUA-7-F
Diodes Incorporated

DDTC123EUA-7-F

Dele Stock.: 197651

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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DDTA144WCA-7
Diodes Incorporated

DDTA144WCA-7

Dele Stock.: 3242

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V,

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DRA9124T0L
Panasonic Electronic Components

DRA9124T0L

Dele Stock.: 132661

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR421100A
Panasonic Electronic Components

UNR421100A

Dele Stock.: 2214

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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DRA9143Y0L
Panasonic Electronic Components

DRA9143Y0L

Dele Stock.: 111471

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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UNR42170RA
Panasonic Electronic Components

UNR42170RA

Dele Stock.: 2227

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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DRA5143Y0L
Panasonic Electronic Components

DRA5143Y0L

Dele Stock.: 150023

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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DRC5115T0L
Panasonic Electronic Components

DRC5115T0L

Dele Stock.: 163004

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR211900L
Panasonic Electronic Components

UNR211900L

Dele Stock.: 2172

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 1 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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UNR221L00L
Panasonic Electronic Components

UNR221L00L

Dele Stock.: 2169

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR911AG0L
Panasonic Electronic Components

UNR911AG0L

Dele Stock.: 2166

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, Modstand - Emitterbase (R2): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DRA2115G0L
Panasonic Electronic Components

DRA2115G0L

Dele Stock.: 154174

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 100 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR221800L
Panasonic Electronic Components

UNR221800L

Dele Stock.: 3224

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 510 Ohms, Modstand - Emitterbase (R2): 5.1 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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PDTC114TEF,115
NXP USA Inc.

PDTC114TEF,115

Dele Stock.: 2278

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

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PDTC123EEF,115
NXP USA Inc.

PDTC123EEF,115

Dele Stock.: 2216

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

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PDTA124XE,115
NXP USA Inc.

PDTA124XE,115

Dele Stock.: 2218

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 22 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

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FJN3315RTA
ON Semiconductor

FJN3315RTA

Dele Stock.: 2233

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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FJNS3204RTA
ON Semiconductor

FJNS3204RTA

Dele Stock.: 2229

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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MUN5135T1G
ON Semiconductor

MUN5135T1G

Dele Stock.: 198266

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5138T1G
ON Semiconductor

MUN5138T1G

Dele Stock.: 138594

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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FJX4010RTF
ON Semiconductor

FJX4010RTF

Dele Stock.: 3247

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 40V, Modstand - base (R1): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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FJNS3208RTA
ON Semiconductor

FJNS3208RTA

Dele Stock.: 2245

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 22 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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MMUN2233LT1
ON Semiconductor

MMUN2233LT1

Dele Stock.: 2274

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJN3309RTA
ON Semiconductor

FJN3309RTA

Dele Stock.: 2252

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 40V, Modstand - base (R1): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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FJN4304RTA
ON Semiconductor

FJN4304RTA

Dele Stock.: 3276

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 47 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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RN1105MFV,L3F
Toshiba Semiconductor and Storage

RN1105MFV,L3F

Dele Stock.: 132067

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 2.2 kOhms, Modstand - Emitterbase (R2): 47 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1416,LF
Toshiba Semiconductor and Storage

RN1416,LF

Dele Stock.: 133985

Transistortype: NPN - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 4.7 kOhms, Modstand - Emitterbase (R2): 10 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2117MFV,L3F
Toshiba Semiconductor and Storage

RN2117MFV,L3F

Dele Stock.: 185

Transistortype: PNP - Pre-Biased, Strøm - Samler (Ic) (maks.): 100mA, Spænding - Collector Emitter Breakdown (Max): 50V, Modstand - base (R1): 10 kOhms, Modstand - Emitterbase (R2): 4.7 kOhms, DC Strømforstærkning (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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